New Photovoltaic Response in the Surface of n-Type InSb
- 1 July 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (8), 3423-3428
- https://doi.org/10.1063/1.1659434
Abstract
Previous studies of anodized InSb samples cooled in the dark to 77°K have shown that initially n‐type surfaces are changed to p type upon visible illumination. For n‐type bulk material an infrared photovoltaic response can be obtained from the inverted surface after such illumination. A new response has been found in n‐type samples which was present initially but which then disappeared upon visible illumination. Measurements on both types of response have shown other distinguishing features, and several models are discussed.Keywords
This publication has 22 references indexed in Scilit:
- Anodic Oxidation of InSb in Nonaqueous ElectrolytesJournal of the Electrochemical Society, 1970
- Effects of Light on the Charge State of InSb–MOS DevicesJournal of Applied Physics, 1969
- MOST's at cryogenic temperaturesSolid-State Electronics, 1968
- Surface Photoconduction in p‐InSb Single CrystalsPhysica Status Solidi (b), 1968
- Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and GePhysical Review B, 1965
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Low-Frequency Conductivity Due to Hopping Processes in SiliconPhysical Review B, 1961
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957
- The Kinetics and Mechanism of Formation of Anode Films on Single-Crystal InSbJournal of the Electrochemical Society, 1957