In-Situ Ellipsometry Study of Amorphous Silicon Interfaces
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Interface formation and microstructural evolution in a-Si:H/a-SiNx:H heterostructuresJournal of Applied Physics, 1986
- The nucleation and growth of glow-discharge hydrogenated amorphous siliconJournal of Applied Physics, 1986
- A spectroscopic ellipsometry study of the nucleation and growth of plasma-deposited amorphous siliconThin Solid Films, 1985
- Fast polarization modulated ellipsometer using a microprocessor system for digital Fourier analysisReview of Scientific Instruments, 1982
- Dielectric function of Si-SiO2 and Si-Si3N4 mixturesJournal of Applied Physics, 1979