Critical Domain Size of the7×7Structure for Nucleation and Growth on Si(111) Quenched Surfaces

Abstract

In situ scanning tunneling microscopy observations of Si(111) quenched surfaces at 550–700 °C have revealed that isolated $7\times 7$ domains nucleate or annihilate with a single SF triangle as a building unit and that there exists a critical nucleus size for $7\times 7$ domain growth. This critical size has a temperature dependence which has been theoretically discussed using the two-dimensional nucleation and growth theory.