AlGaAs multiple-wavelength light-emitting bar grown by laser-assisted metalorganic chemical vapor deposition
- 2 May 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (18), 1499-1501
- https://doi.org/10.1063/1.99111
Abstract
The first optical device fabricated from epitaxial material grown by laser-assisted crystal growth is reported. The device is an AlGaAs multiple-wavelength light-emitting bar in which the Al composition of the active layer, and thus the emission wavelength, varies as a function of position along the bar. The Al composition is photochemically patterned during growth with an in situ Ar+ laser beam. The energy band gap increases from a minimum of 1.475 eV to a maximum of 1.52 eV over a 4 mm section of the bar. The spatial dependence of the energy band gap is roughly Gaussian and corresponds to the laser intensity profile. The electroluminescent data are presented along with a brief discussion of the laser-assisted crystal growth process.Keywords
This publication has 8 references indexed in Scilit:
- Laser induced disordering of GaAs-AlGaAs superlattice and incorporation of Si impurityApplied Physics Letters, 1986
- Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- Selective area control of material properties in laser-assisted MOVPE of GaAs and AlGaAsJournal of Crystal Growth, 1986
- Laser selective deposition of GaAs on SiApplied Physics Letters, 1986
- Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAsApplied Physics Letters, 1985
- High temperature growth rate in MOCVD growth of AlGaAsJournal of Crystal Growth, 1984
- Growth and characterization of heteroepitaxial zinc selenideJournal of Crystal Growth, 1981
- Effects Due to Absorption of Laser RadiationJournal of Applied Physics, 1965