A new acceptor level in indium-doped silicon

Abstract

A new acceptor level located 0.111±0.002 eV from the valence band with a peak photoionization cross section of (1.4±0.6) ×10⁻¹⁶ cm² has been observed in indium‐doped silicon. Its presence is revealed both by the low‐temperature slope of Hall measurements versus temperature and by the spectral response of the photoconductivity. The concentration of this 0.111‐eV level is strongly correlated with the concentration of indium, suggesting that an In complex is responsible for this center.