Controlled sublimation growth of single crystalline 4H-SiC and 6H-SiC and identification of polytypes by x-ray diffraction

Abstract

Polytype‐controlled crystal growth of SiC was carried out by using a sublimation method. Production yields as high as 80% and 85% for 4H and 6H single crystals were obtained, respectively. We observed in x‐ray diffraction pattern of SiC that space‐group‐forbidden peaks appear periodically among (000l) peaks. Their intensity is strong enough to be distinguished. These peaks represent the periodicity along the c axis of each polytypic modification of SiC. X‐ray diffractometry using these peaks is quite useful and easy for a clear identification of the SiC polytypes.