Electron velocity in Si and GaAs at very high electric fields
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (9), 797-798
- https://doi.org/10.1063/1.92078
Abstract
A microwave time‐of‐flight technique was used to measure the drift velocity of electrons in thin Si and GaAs epitaxial layers at very high electric fields. The room‐temperature velocity‐field characteristic is reported for silicon at fields up to 130 kV/cm, and for GaAs at fields up to 215 kV/cm.Keywords
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