Electrical Transport in Rings of Single-Wall Nanotubes: One-Dimensional Localization
- 8 May 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 84 (19), 4441-4444
- https://doi.org/10.1103/physrevlett.84.4441
Abstract
We report low-temperature magnetoresistance (MR) measurements on rings of single-wall carbon nanotubes. Negative MR characteristic of weak one-dimensional localization is clearly observed from 3.0 to 60 K, and the coherence length is obtained as a function of temperature. The dominant dephasing mechanism is identified as electron-electron scattering. Below 1 K, we observe a transition from weak to strong localization, and below 0.7 K a weak antilocalization is induced by spin-orbit scattering.
Keywords
This publication has 24 references indexed in Scilit:
- Disorder, Pseudospins, and Backscattering in Carbon NanotubesPhysical Review Letters, 1999
- Aharonov–Bohm oscillations in carbon nanotubesNature, 1999
- Single- and multi-wall carbon nanotube field-effect transistorsApplied Physics Letters, 1998
- Impurity Scattering in Carbon Nanotubes – Absence of Back Scattering –Journal of the Physics Society Japan, 1998
- Room-temperature transistor based on a single carbon nanotubeNature, 1998
- Carbon nanotubes as long ballistic conductorsNature, 1998
- Individual single-wall carbon nanotubes as quantum wiresNature, 1997
- Quantum Transport in a Multiwalled Carbon NanotubePhysical Review Letters, 1996
- Disordered electronic systemsReviews of Modern Physics, 1985
- Weak localization in thin filmsPhysics Reports, 1984