Efficient Electroluminescence in GaP p-n Junctions Grown by Liquid-Phase Epitaxy on Vapor-Grown Substrates
- 15 March 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (4), 1987-1988
- https://doi.org/10.1063/1.1709804
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Preparation and Properties of Solution-Grown Epitaxial p—n Junctions in GaPJournal of Applied Physics, 1966
- The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport MechanismJournal of the Electrochemical Society, 1964