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Modeling, fabrication and performance of ion implanted low-noise GaAs FETs
Home
Publications
Modeling, fabrication and performance of ion implanted low-noise GaAs FETs
Modeling, fabrication and performance of ion implanted low-noise GaAs FETs
JH
J.A. Higgins
J.A. Higgins
RK
R.L. Kuvas
R.L. Kuvas
DC
D.R. Ch'En
D.R. Ch'En
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1 January 1977
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
p.
506-509
https://doi.org/10.1109/iedm.1977.189303
Abstract
No abstract available
Keywords
FABRICATION
GALLIUM ARSENIDE
ION IMPLANTATION
SEMICONDUCTOR PROCESS MODELING
MICROWAVE FETS
NOISE FIGURE
DOPING PROFILES
ANNEALING
FREQUENCY
CIRCUIT TESTING
Cited by 3 articles