Electron-hole pair production by impact ionization in zinc selenide
- 1 December 1970
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 3 (12), 2468-2473
- https://doi.org/10.1088/0022-3719/3/12/013
Abstract
Measurements have been made of the ionization coefficient as a function of electrical field in znse. Hole and electron ionization coefficients are equal within the limits of the experiments. The results obtained are consistent with baraff's theory. Values of the scattering length lamda lie in the range 25-50 aa. An empirical relation has been found between lamda and the concentration of ionized impurities. The results are discussed in terms of the band structure of znse. The ionization coefficients are consistent with those of similar materials.Keywords
This publication has 8 references indexed in Scilit:
- Calculation of the Reflectivity, Modulated Reflectivity, and Band Structure of GaAs, GaP, ZnSe, and ZnSPhysical Review B, 1969
- Self-Consistent Orthogonalized-Plane-Wave and Empirically Refined Orthogonalized-Plane-Wave Energy-Band Models for Cubic ZnS, ZnSe, CdS, and CdSePhysical Review B, 1969
- Impact ionization in ZnSe and comparison with CdSPhysics Letters A, 1967
- Chemistry and Electrical Properties of the Interface Between ZnSe and an ElectrolyteJournal of the Electrochemical Society, 1967
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Avalanche Breakdown in GermaniumPhysical Review B, 1955