Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator
- 12 October 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (15), 1132-1134
- https://doi.org/10.1063/1.98761
Abstract
An optical electroabsorption waveguide modulator is described based on the quantum‐confined Stark effect in an InGaAs/InP multiple quantum well waveguide. The optical modulator has a high on/off ratio (47:1) with very low insertion loss (2.9 dB) and a 3‐dB modulation bandwidth of 3.0 GHz at 0.1 mW optical input power.Keywords
This publication has 14 references indexed in Scilit:
- High-temperature observation of heavy-hole and light-hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxyApplied Physics Letters, 1987
- Low loss InGaAs/InP multiple quantum well waveguidesApplied Physics Letters, 1986
- High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxyApplied Physics Letters, 1986
- High-speed electroabsorption modulator with strip-loaded GaInAsP planar waveguideJournal of Lightwave Technology, 1986
- Anisotropic electroabsorption and optical modulation in InGaAs/InAlAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1986
- Strong polarization-sensitive electroabsorption in GaAs/AlGaAs quantum well waveguidesApplied Physics Letters, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- 131 ps optical modulation in semiconductor multiple quantum wells (MQW's)IEEE Journal of Quantum Electronics, 1985
- High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structureApplied Physics Letters, 1984
- IVB-7 continuous multi-gigahertz modulation of Q-switched GaInAsP diode lasersIEEE Transactions on Electron Devices, 1983