Temperature dependencies of current-voltage characteristics of GaAs:Cr
- 1 March 2016
- journal article
- Published by IOP Publishing in Journal of Instrumentation
- Vol. 11 (3), C03059
- https://doi.org/10.1088/1748-0221/11/03/c03059
Abstract
A detailed analysis of temperature dependencies of I-V-characteristics of high resistive chromium compensated gallium arsenide (HR GaAs:Cr) sensors is presented. Samples had Cr/Ni contacts made using electron-beam deposition that formed Schottky barrier contact to GaAs. Thus the structure of the samples was Ni/Cr – HR GaAs:Cr – Cr/Ni. The I-V curves were investigated in the temperature range from 23°C to 70°C. Current-voltage characteristics quite well obey the thermionic emission model in all ranges of temperature. The barrier height of the Schottky barrier was calculated from experimental data. The results of the investigation are discussed in this paper.Keywords
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