Threshold for argon bubble growth in sputtered amorphous Nb3Ge
- 8 June 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (23), 1645-1647
- https://doi.org/10.1063/1.97755
Abstract
We have studied the influence of the bias potential on argon incorporation and bubble formation in sputtered thin films of a‐Nb3Ge. Above 100 V bias bubbles are observed directly by transmission electron microscopy and indirectly by abrupt changes in the electronic properties. The influence of the sputter parameters on argon incorporation at 0 V bias is also investigated.Keywords
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