Hydrogen sensitivity of palladium–thin-oxide–silicon Schottky barriers
- 1 January 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (18), 483-484
- https://doi.org/10.1049/el:19760365
Abstract
It is shown that current transport through Schottky barriers formed by Pd on n-type silicon with a thin thermally grown oxide is sensitive to hydrogen in the ambient. It is shown that a transition from minority- to majority-carrier dominated current occurs with increasing hydrogen pressure.Keywords
This publication has 1 reference indexed in Scilit:
- Open circuit voltage of MIS Schottky diode solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975