Liquid Phase Epitaxial Growth of CuGaTe2 on ZnSe from Bi Solution

Abstract

A CuGaTe₂ layer was grown on ZnSe by liquid phase epitaxy from Bi solution. This combination produced a large lattice misfit and considerable lattice distortion. The optimum growth conditions were as follows: a maximum temperature of 530°C, a cooling rate of 0.5°C/min and the substrate orientation ZnSe(111)_Se. The epitaxial growth was confirmed by electron diffraction, and the results of Hall measurements at 300 K gave σ=12.5 Ω^-1-cm^-1, µ_H=33.0 cm²/Vs and N _A=2.40×10¹⁸ cm^-3. From EPMA, (CuGaTe₂)_1-x –(2ZnSe) _x alloys were found to form a solid solution. The thickness of the mixed crystal layer was 1.0 µm.