Material properties of p-type GaAs at large dopings

Abstract

We summarize the room‐temperature minority‐carrier mobility, minority‐carrier lifetime, and effective band‐gap shrinkage for p‐type GaAs at large dopings, as determined from measurements on heterostructure bipolar transistors and published literature. The minority‐carrier mobilities are significantly smaller than the majority‐carrier mobilities, the lifetime data show a change in dependence on doping at 1×10¹⁹ cm⁻³, and the effective band‐gap shrinkage is ≊5% at 1×10¹⁹ cm⁻³. The fits to electrical parameters described here should be of interest in modeling of minority‐carrier devices.