Self-Organization in Growth of Quantum Dot Superlattices
- 4 March 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 76 (10), 1675-1678
- https://doi.org/10.1103/physrevlett.76.1675
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Island Scaling in Strained Heteroepitaxy: InAs/GaAs(001)Physical Review Letters, 1995
- Atomic force microscopy study of strained InGaAs quantum disks self-organizing on GaAs (n11)B substratesApplied Physics Letters, 1994
- Competing relaxation mechanisms in strained layersPhysical Review Letters, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular-beam epitaxyApplied Physics Letters, 1991
- The interfacial morphology of strained epitaxial InxGa1−xAs/GaAsJournal of Applied Physics, 1991
- Elastic interactions of point defects in a semi-infinite mediumSurface Science, 1980