Novel resonant tunneling transistor with high transconductance at room temperature
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (7), 236-238
- https://doi.org/10.1109/55.294081
Abstract
A resonant tunneling transistor (RTT) utilizing a novel heterodimensional Schottky gate technology is described. The gate is formed by electroplating Pt/Au onto the side of an AlGaAs/GaAs double barrier structure. The gate voltage modulates the drain current by modulating the area of the quasi-two dimensional electron accumulation layer which forms above the source barrier under drain-source bias. Room temperature transistor characteristics included a peak current of 225 mA/mm and peak transconductance of 218 mS/mm. The ultrafine fabrication process is also discussed.Keywords
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