Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature
- 19 February 2008
- journal article
- research article
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 2 (3), 93-95
- https://doi.org/10.1002/pssr.200802009
Abstract
No abstract availableKeywords
Funding Information
- German State of Lower Saxony
- German Federal Ministry for the Environment, Nature conservation, and Nuclear Safety (0327650C)
This publication has 6 references indexed in Scilit:
- Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline siliconProgress In Photovoltaics, 2007
- Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline siliconPhysical Review B, 2007
- Electronically activated boron-oxygen-related recombination centers in crystalline siliconJournal of Applied Physics, 2006
- Fundamental boron–oxygen‐related carrier lifetime limit in mono‐ and multicrystalline siliconProgress In Photovoltaics, 2005
- Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline siliconPhysical Review B, 2004
- Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance dataApplied Physics Letters, 1996