PREPARATION OF VISIBLE-LIGHT-EMITTING p-n JUNCTIONS IN AlAs
- 15 July 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (2), 90-92
- https://doi.org/10.1063/1.1653321
Abstract
p‐n junctions have been formed for the first time in AlAs by diffusing Zn into single‐crystal n‐type vapor‐grown AlAs layers. I–V, C–V, and photovoltage measurements indicate well‐behaved junctions at room temperature with external electroluminescent efficiencies on the order of 10−5. The room‐temperature forward‐bias emission spectrum consists of a narrow yellow‐green peak at 2.146 eV and two broad infrared peaks at 1.66 and 1.35 eV. At 600°K and 3 V reverse‐bias current densities of 10−3 A/cm2 are observed.Keywords
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