Analysis of thin film ferroelectric aging
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The effects of temperature, electric field, and the number of polarization reversals on ferroelectric memory aging are analyzed on ferroelectric capacitors and memory products. The signal loss proceeds linearly with the log of time. A relationship between read/write cycles and retention lifetime is established. Acceleration models and methods for testing ferroelectric memory reliability are proposed. Based on these models, retention and write endurance predictions are made.<>Keywords
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