Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition
- 10 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (6), 698-700
- https://doi.org/10.1063/1.106541
Abstract
Textured diamond films have been deposited on β-SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] directions parallel to the SiC[110] within 3°. The diamond was characterized by Raman spectroscopy and scanning electron microscopy.Keywords
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