Polycrystalline silicon by glow discharge technique
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (9), 686-687
- https://doi.org/10.1063/1.91254
Abstract
Polycrystalline silicon was obtained by glow discharge decomposition of silane on heated amorphous substrates. The influence of substrate temperature on crystalline structure and electrical conductivity of silicon films was investigated. Textured polycrystalline films were obtained above 450 °C.Keywords
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