Vertical MOS technology with sub-0.1 µm channel lengths
- 3 August 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (16), 1394-1396
- https://doi.org/10.1049/el:19950890
Abstract
A vertical MOSFET with a channel length of 85 nm has been fabricated by molecular beam epitaxy. Compared to previous work, the electrical behaviour has been greatly improved, allowing the use of standard simulation tools for analysing the I-V characteristics. From experimental and theoretical results, we conclude that for vertical MOSFETs, the useful minimum channel length is not limited by the technological constraints but by the physical limits of the electrical performance. The useful minimum channel length is estimated to be 80 nm.Keywords
This publication has 3 references indexed in Scilit:
- Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1994
- Dependence of electron channel mobility on Si-SiO/sub 2/ interface microroughnessIEEE Electron Device Letters, 1991
- Design and experimental technology for 0.1-µm gate-length low-temperature operation FET'sIEEE Electron Device Letters, 1987