Study of Breakdown Fields of Oxides Grown on Reactive Ion Etched Silicon Surface: Improvement of Breakdown Limits by Oxidation of the Surface
- 1 July 1983
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 130 (7), 1549-1550
- https://doi.org/10.1149/1.2120030