Mass spectrometric studies of phosphine pyrolysis and OMVPE growth of InP
- 1 November 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 85 (1-2), 148-153
- https://doi.org/10.1016/0022-0248(87)90216-8
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxyApplied Physics Letters, 1986
- Organometallic growth and characterization of GaxIn1−xP (x=0.51, 0.65, 0.69)Journal of Applied Physics, 1986
- Atomic layer epitaxyJournal of Applied Physics, 1986
- The use of metalorganic chemical vapor deposition to prepare device quality Ga(AsP) strained-layer superlatticesJournal of Electronic Materials, 1986
- Ultraviolet induced metal-organic chemical vapor deposition growth of GaAsJournal of Vacuum Science & Technology A, 1986
- Decomposition kinetics of OMVPE precursorsJournal of Crystal Growth, 1986
- MOCVD Growth of GaAs0.6P0.4 on Si SubstrateJapanese Journal of Applied Physics, 1986
- Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium sourceApplied Physics Letters, 1985
- Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2Journal of the Electrochemical Society, 1985
- XLVII.—The unimolecular decomposition of phosphineJournal of the Chemical Society, Transactions, 1924