Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
- 7 August 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (6), 812-814
- https://doi.org/10.1063/1.1306653
Abstract
We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly with the excitation density. The results suggest that the observed effect is due to a two-step two-photon absorption process involving quantum dot states.Keywords
This publication has 13 references indexed in Scilit:
- Dynamic process of anti-Stokes photoluminescence at a long-range-orderedheterointerfacePhysical Review B, 1999
- Photoluminescence up-conversion in heterostructuresPhysical Review B, 1998
- Dynamics of anti-Stokes photoluminescence in type-II heterostructures: The important role of long-lived carriers near the interfacePhysical Review B, 1997
- Band alignment and photoluminescence up-conversionat the GaAs/(ordered)heterojunctionPhysical Review B, 1997
- Interface-induced conversion of infrared to visible light at semiconductor interfacesPhysical Review B, 1996
- High-efficiency energy up-conversion at GaAs-GaInP2 interfacesApplied Physics Letters, 1995
- Low-temperature anti-Stokes luminescence mediated by disorder in semiconductor quantum-well structuresPhysical Review B, 1995
- High-Efficiency Energy Up-Conversion by an "Auger Fountain" at an InP-AIInas Type-II HeterojunctionPhysical Review Letters, 1994
- Up conversion of luminescence via deep centers in high purity GaAs and GaAlAs epitaxial layersApplied Physics Letters, 1984
- Deep center EL2 and anti-Stokes luminescence in semi-insulating GaAsApplied Physics Letters, 1982