Breakdown Voltage of Graded Gallium Arsenide p-n Junctions
- 1 August 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (8), 2495-2497
- https://doi.org/10.1063/1.1702778
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Silicon Diffused Junction “Avalanche” DiodesJournal of the Electrochemical Society, 1957
- Photon Emission from Avalanche Breakdown in SiliconPhysical Review B, 1956
- Avalanche Breakdown in SiliconPhysical Review B, 1954