Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions
- 1 February 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (2B), L200
- https://doi.org/10.1143/jjap.36.l200
Abstract
Ferromagnetic tunnel junctions with naturally oxidized Al barriers were fabricated by magnetron sputtering. Using metal masks, 0.01 mm2 junction areas were patterned. Junctions with slightly oxidized Al barriers showed small tunnel resistances. Of those, some had extraordinarily large MR ratios, others had different tunnel resistances according to different current-flow paths, and some had characteristics of both. In contrast, junctions with well oxidized Al barriers exhibited a large tunnel resistance and good stability. The Ni–Fe/Co/Al–AlO x /Co/Ni–Fe/Fe–Mn/Ni–Fe junction showed spin-valve-like R-H properties. The MR ratio was 10% for a 20 Oe magnetic field.Keywords
This publication has 5 references indexed in Scilit:
- Geometrically enhanced magnetoresistance in ferromagnet–insulator–ferromagnet tunnel junctionsApplied Physics Letters, 1996
- Giant magnetic tunneling effect in Fe/Al2O3/Fe junctionJournal of Magnetism and Magnetic Materials, 1995
- Electron tunneling between ferromagnetic filmsIEEE Transactions on Magnetics, 1982
- Tunneling between ferromagnetic filmsPhysics Letters A, 1975
- Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963