A unique monolithic X-band f.e.t. amplifier is described. Wideband matching circuits, using lumped elements, are integrated with the transistor on semi-insulating gallium arsenide to produce an amplifier chip 1.8×1.2 mm. Gains in excess of 4.5 dB over 7.5 to 11.5 GHz have been measured. The chip has been installed into a low-parasitic package to produce a gain module suitable for the microwave engineer.