Deep Levels of High Resistivity Sb Doped CdTe
- 1 March 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (3R)
- https://doi.org/10.1143/jjap.24.361
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Photo-Induced Current Transient Spectroscopy in High-Resistivity Bulk Material. II. Influence of Non-Exponential Transient on Determination of Deep Trap ParametersJapanese Journal of Applied Physics, 1983
- Photo-Induced Current Transient Spectroscopy in High-Resistivity Bulk Material. I. Computer Controlled Multi-Channel PICTS System with High-ResolutionJapanese Journal of Applied Physics, 1983
- Deep-level spectroscopy in high-resistivity materialsApplied Physics Letters, 1978
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974