Deep-level spectroscopy in high-resistivity materials
- 15 June 1978
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (12), 821-823
- https://doi.org/10.1063/1.89929
Abstract
A simple method to characterize deep levels in high‐resistivity materials is described. Excess carriers are optically injected by pulsed light. The detrapping of these carriers leads to a transient current collected between two contacts. The signal is analyzed as in DLTS, i.e., deep level spectra are recorded during temperature cycles. Some examples of the use of this method are given.Keywords
This publication has 6 references indexed in Scilit:
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Hole traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Determination of deep levels in Cu-doped GaP using transient-current spectroscopyJournal of Applied Physics, 1976
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970