Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix
- 1 April 1997
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 31 (4), 411-414
- https://doi.org/10.1134/1.1187173
Abstract
Arrays of vertically aligned InGaAs quantum dots in a AlGaAs matrix have been investigated. It is shown that increasing the band gap of the matrix material makes it possible to increase the localization energy of quantum dots relative to the edge of the matrix band, as well as the states of the wetting layer. The use of an injection laser as the active region makes it possible to decrease the thermal filling of higher-lying states, and thereby decrease the threshold current density to 63 A/cm2 at room temperature. A model explaining the negative characteristic temperature section observed at low temperatures is proposed. The model is based on the assumption that a transition occurs from nonequilibrium to equilibrium filling of the states of the quantum dots.Keywords
This publication has 6 references indexed in Scilit:
- Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasingSolid-State Electronics, 1996
- Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laserSemiconductor Science and Technology, 1996
- Structural characterization of (In,Ga)As quantum dots in a GaAs matrixPhysical Review B, 1995
- MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structuresSuperlattices and Microstructures, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982