Exciton and pair recombination in crystalline and amorphous As2Se3

Abstract
For the first time it has been possible to compare by ODMR the recombination processes in amorphous and crystalline forms of a semiconductor. The results show that in c- and a-As2Se3 the same defects are involved in exciton and distant pair recombination. A direct comparison of the ODMR signal strength and the PL fatigue in the glass shows that the resonances are from radiative centres.