Microplasmas in Silicon p-n Junctions as Detectors for Gamma Radiation
- 1 April 1963
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 34 (4), 390-392
- https://doi.org/10.1063/1.1718373
Abstract
A counting device of very small dimensions is described which may preferably be used as counter for γ radiation. When operating a silicon diode (alloyed type) in its prebreakdown region, where the breakdown is unstable and giving voltage pulses, the rate of these pulses is a linear function of the incident radiation. In that way the device shows a behavior like a Geiger‐Müller tube with large breakdown pulses and small ``deadtime'' (several micro‐seconds). Measurements were taken with a 350‐C Co60 source in the range of 10 to 104 R/h. As an extrapolation indicates, the device may be used for dose rate measurements up to 107 R/h. Temperature and time stability of the effect are discussed.Keywords
This publication has 4 references indexed in Scilit:
- Theory of Microplasma Instability in SiliconJournal of Applied Physics, 1961
- Gamma Irradiation of Silicon. I. Levels in n-Type Material Containing OxygenJournal of Applied Physics, 1960
- Light Emission and Noise Studies of Individual Microplasmas in Silicon p-n JunctionsJournal of Applied Physics, 1959
- Microplasmas in SiliconPhysical Review B, 1957