Origin of the R-ion effect on in R
- 1 May 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (18), 12900-12903
- https://doi.org/10.1103/physrevb.51.12900
Abstract
and /dP have been systematically measured for fully oxygenated R (R-123) with R=Yb, Tm, Ho, Dy, Gd, Sm, and Nd. has been observed to increase from 88 to 94 K with increasing radius of the R ion (r) from 0.98 to 1.12 Å. Based on the lattice strains and our /dP data, we have calculated for the series of R-123 and compared them with the measured . Good agreement between the experimental and the calculated results strongly suggests that the R effect on in R-123 originates from the strain-induced charge redistribution between the charge reservoir and the plane.
Keywords
This publication has 1 reference indexed in Scilit:
- Anisotropic pressure dependence of in single-crystal via thermal expansionPhysical Review B, 1990