Residual double acceptors in bulk GaAs
- 1 February 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (3), 274-276
- https://doi.org/10.1063/1.93913
Abstract
By using infrared absorption, photoluminescence, and Hall measurements we have observed an additional level associated with a residual acceptor in liquid encapsulated Czochralski GaAs. These results indicate that the defect is a double acceptor with levels 78 and 200 meV above the valence band.Keywords
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