Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si

Publisher Website

1 December 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (12), 692-693
https://doi.org/10.1109/edl.1986.26522

Abstract

Inversion-type n-channel MOSFET's of cubic-SiC were successfully fabricated. Cubic-SiC was grown on Si

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Cited by 74 articles