Spray-deposited ITO—Silicon SIS heterojunction solar cells

Abstract
A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type silicon using spray-deposited indium-tin-oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I layer have been optimized to yield the following photovoltaic parameters on 0.5-Ω . cm n-Si:V_{OC} = 0.52V,J_{SC} = 31.5mA/cm2(adjusted for Ag grid area),FF= 0.70, and illuminated area η = 11.5 percent. The darkI-VandC-Vcharacteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.