Liquid phase epitaxial growth of GaAs from AuGeNi melts
- 31 July 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (7), 617-621
- https://doi.org/10.1016/0038-1101(77)90101-0
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975
- Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAsSolid-State Electronics, 1975
- An Internal Friction Study on the Alloying Behaviour of Au-GaAs ContactJapanese Journal of Applied Physics, 1973
- Specific contact resistance of ohmic contacts to gallium arsenideSolid-State Electronics, 1972
- Alloying Behavior of Au and Au–Ge on GaAsJournal of Applied Physics, 1971
- Transport Properties of the Gold Germanium Gallium Arsenide Metal Semiconductor SystemJournal of Applied Physics, 1971
- Ohmic Contacts to Solution-Grown Gallium ArsenideJournal of Applied Physics, 1969
- Effect of Nonuniform Conductivity on the Behavior of Gunn Effect SamplesJournal of Applied Physics, 1968
- Metal-semiconductor contacts for GaAs bulk effect devicesSolid-State Electronics, 1967
- Alloying to III–V Compound SurfacesJournal of the Electrochemical Society, 1962