Characteristics of a gallium-arsenide travelling-wave amplifier with Schottky-barrier contacts

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Abstract
Experimental results of the dependence of small-signal gain on bias voltages, applied to Schottky-barrier contacts which are r.f. input and output terminals of a gallium-arsenide travelling-wave amplifier are reported. In the optimum bias condition, a maximum net gain of 10 dB at 6.6 GHz in d.c. operation has been observed.