Avalanche Region of IMPATT Diodes
- 1 December 1966
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 45 (10), 1797-1827
- https://doi.org/10.1002/j.1538-7305.1966.tb02436.x
Abstract
The avalanche region of an IMPATT (IMPact ionization Avalanche Transit Time) diode under small signal conditions is characterized by the fraction of the total alternating current that is carried by holes and electrons in their respective drift spaces...Keywords
This publication has 5 references indexed in Scilit:
- Electronic tuning effects in the read microwave avalanche diodeIEEE Transactions on Electron Devices, 1966
- Negative resistance in p-n junctions under avalanche breakdown conditions, part IIIEEE Transactions on Electron Devices, 1966
- Experimental characterization of a negative-resistance avalanche diodeIEEE Transactions on Electron Devices, 1966
- THE READ DIODE—AN AVALANCHING, TRANSIT-TIME, NEGATIVE-RESISTANCE OSCILLATORApplied Physics Letters, 1965
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964