Radiative Transition with Visible Light in Electrochemical Anodized Polycrystalline Silicon
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1A), L5-7
- https://doi.org/10.1143/jjap.32.l5
Abstract
Radiative transition with visible light was observed by means of a porous layer made from polycrystalline silicon (poly-Si). Photoluminescence (PL) spectra were characterized as a function of initial poly-Si materials. For poly-Si formed by the casting method, a PL spectrum with the peak energy of 2.00 eV and the fullwidth at half maximum (FWHM) of 0.42 eV were obtained. For poly-Si formed by thermal CVD, the peak energy and the FWHM were 1.84 eV and 0.57 eV, respectively. On the basis of these findings, the structure of a highly developed display system, which contains TFT and luminous regions in the same poly-Si layer, was also proposed.Keywords
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