Effects of Effective-Mass Hamiltonian Forms on Valence Band Structures of Quantum Wells
- 1 October 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (10A), L1401
- https://doi.org/10.1143/jjap.31.l1401
Abstract
Calculations have been made of the valence band structures of two typical quantum well films, GaAs/Al0.3Ga0.7As and In0.53Ga0.47As/InP, using two kinds of effective-mass Hamiltonian forms (characterized by β=0 and β=-1). While the two methods produce no significant difference for GaAs/Al0.3Ga0.7As, a great difference is revealed for In0.53Ga0.47As/InP. The method using β=0 appears to be a better choice for the latter system.Keywords
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