Comments on ``Luminescence from electron-irradiated silicon''

Abstract

Zero‐phonon transitions at 0.79 and 0.97 eV observed in electron‐irradiated silicon have been ascribed by previous workers to the K center and the divacancy, respectively, on the basis of their production and annealing behavior. This paper shows that, contrary to the original interpretation, the uniaxial stress results on these lines indicate monoclinic symmetry, which is consistent with the proposed models. The stress results on a third zero‐phonon line at 1.045 eV are reinterpreted.