Spherical-Square-Well Defect-Potential Model for 1-MeV Electron Irradiated Defects in Silicon

Abstract

A spherical-square-well model for defect potentials is fitted to fourteen defects observed in electron-irradiated silicon. The thermal activation energy is taken as the ground bound state in the well and the radius of the well $a$ is obtained from the experimental thermal emission cross section, $\sigma =\pi a^2$. An empirical relationship was observed between the well depth $V_0$ and the radius, $V_0=(9\mathrm{}\pm 1)a^{1.3\pm 0.1}$. Other authors have used a spherical-square-well model to calculate the photoionization cross section and the electric field dependence of the thermal-emission rate. These calculations are compared to measurement results with rough agreement.