Molecular-beam epitaxy of beryllium-chalcogenide-based thin films and quantum-well structures
- 15 July 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (2), 792-796
- https://doi.org/10.1063/1.362888
Abstract
A variety of BeMgZnSe–ZnSe‐ as well as BeTe‐based quantum‐well structures has been fabri‐ cated and investigated. BeTe buffer layers improve the growth start on GaAs substrates drasti‐ cally compared to ZnSe/GaAs. The valence‐band offset between BeTe and ZnSe has been determined to be 0.9 eV (type II). Due to the high‐lying valence band of BeTe, a BeTe–ZnSe pseudograding can be used for an efficient electrical contact between p‐ZnSe and p‐GaAs. BeMgZnSe quaternary thin‐film structures have reproducibly been grown with high struc‐ tural quality, and rocking curve widths below 20 arcsec could be reached. Quantum‐well structures show a high photoluminescence intensity even at room temperature.Keywords
This publication has 14 references indexed in Scilit:
- Phase transformation of BeSe and BeTe to the NiAs structure at high pressurePhysical Review B, 1995
- Band Offset Engineering of II-VI/III-V HeterointerfacesMaterials Science Forum, 1995
- MBE of ZnSe Alloys to Achieve Room Temperature CW Laser DiodesPhysica Status Solidi (b), 1995
- Design of ohmic contacts to p-ZnSeApplied Physics Letters, 1994
- Ohmic contacts top-type ZnSe using ZnTe/ZnSe multiquantum wellsElectronics Letters, 1993
- Graded band gap ohmic contact to p-ZnSeApplied Physics Letters, 1992
- Epitaxial growth of ZnMgSSe on GaAs substrate by molecular beam epitaxyJournal of Crystal Growth, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1991