Room-temperature laser operation of InxGa1−xAs p-n junctions

Abstract

Room‐temperature laser diodes which emit coherent infrared radiation near 1.1 μm have been prepared from In_xGa_1−xAs (x [inverted lazy s]0.23) vapor‐grown p‐n junction structures. At 77°K, laser threshold current densities as low as 1210 A/cm² and external differential quantum efficiencies as high as 50% have been obtained at 1.08 μm. At 300°K, the threshold current densities are between 70 000 and 98 000 A/cm² for emission at 1.145 μm.