Symmetry relations between the mobility and differential mobility-tensor components of cubic semiconductors in the hot carrier range
- 15 December 1972
- Vol. 62 (4), 565-573
- https://doi.org/10.1016/0031-8914(72)90241-8
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Conductivity anisotropy ofn-type silicon in the range of warm and hot carriersThe European Physical Journal A, 1965
- Hot carrier conduction, Hall mobility and injection characteristics of p-type GePhysica, 1965
- Hot electron conductivity of near intrinsic germaniumPhysica, 1963
- Anisotropy of the Conductivity of-Type Germanium at High Electric FieldsPhysical Review B, 1963
- DRIFT VELOCITY OF HOT ELECTRONS IN n-TYPE GERMANIUMCanadian Journal of Physics, 1962
- High-Field Conductivity in Germanium and Silicon at Microwave FrequenciesJournal of Applied Physics, 1961
- Anisotropy of Hot Electrons in n-type GermaniumJournal of the Physics Society Japan, 1958
- Experimental Evidence of the Anisotropy of Hot Electrons in n-type GermaniumJournal of the Physics Society Japan, 1956
- Hot Electron Problem in Semiconductors with Spheroidal Energy SurfacesPhysical Review B, 1955
- Magnetoresistance Effect in Cubic Semiconductors with Spheroidal Energy SurfacesPhysical Review B, 1954